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| savantic semiconductor product specification silicon npn power transistors but18f BUT18AF description with to-220fa package high voltage ,high speed applications converters inverters switching regulators motor control systems pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (tc=25 ) symbol parameter conditions value unit but18f 850 v cbo collector-base voltage BUT18AF open emitter 1000 v but18f 400 v ceo collector-emitter voltage BUT18AF open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 6 a i cm collector current-peak 12 a i b base current 3 a i bm base current-peak 6 a p tot total power dissipation t c =25 33 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors but18f BUT18AF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit but18f 400 v ceo(sus) collector-emitter sustaining voltage BUT18AF i c =0.1a; i b =0;l=25mh 450 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 1.5 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.3 v but18f v ce =850v ;v be =0 t j =125 1.0 2.0 i ces collector cut-off current BUT18AF v ce =1000v ;v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =10ma ; v ce =5v 10 35 h fe-2 dc current gain i c =1a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c =4a; i b1 =-i b2 =0.8a v cc =250v 0.8 s savantic semiconductor product specification 3 silicon npn power transistors but18f BUT18AF package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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